Contribution to Silicon-Carbide-MESFET ESD Robustness Analysis

Silicon Carbide Power MESFET

Failure analysis of ESD-stressed SiC MESFET

a CNRS, LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France b Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France c Université de Lyon, CNRS, Laboratoire AMPERE, UMR 5005, INSA de Lyon, F-69621 Villeurbanne, France d Institut de Microelectrónica de Barcelona-Centre Nacional de Microelectrónica (IMB-CNM), Consejo Superior de Investigaciones Científicas (CSIC), Universitat Autònoma de Bar...

Silicon Nitride and Silicon Carbide

Boron carbide/n-silicon carbide heterojunction diodes

Exposure to Fibres, Crystalline Silica, Silicon Carbide and Sulphur Dioxide in the Norwegian Silicon Carbide Industry

OBJECTIVES The aim of this study was to assess personal exposure to fibres, crystalline silica, silicon carbide (SiC) and sulphur dioxide in the Norwegian SiC industry. METHODS Approximately 720 fibre samples, 720 respirable dust samples and 1400 total dust samples were collected from randomly chosen workers from the furnace, processing and maintenance departments in all three Norwegian SiC p...